* High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter Free Datasheet http://www.datasheet4u.com/ 2SC5022 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cur
2SC5022
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Silicon npn transistor.
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Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
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📁 Related Datasheet
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.
2SC5022 - NPN TRANSISTOR
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Application
High voltage amplifier
Features
• High breakdown voltage V (BR)CEO = 1500 V Min
Outline
TO-220FM
1.
2SC5023 - Silicon NPN Epitaxial Type Transistor
(Hitachi Semiconductor)
..
2SC5023
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2SC5024 - Silicon NPN Epitaxial Type Transistor
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High frequency amplifier
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High frequency amplifier
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• Excellent high frequency characteristics fT = 1.2 GHz typ • .
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2SC5026
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4.5±0.1 1.6±0.2
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(Panasonic)
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This product plies with the RoHS Directive (EU 2002/95/EC).
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