* High gain bandwidth product fT = 11 GHz Typ
* High gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “YZ
* ”. Attention: This device is very sensitive to electro static discharge.
2SC5050
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Silicon npn transistor.
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th.
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