2SC5057 - Silicon NPN Triple Diffused Planar Transistor

Product Overview

Hitachi Semiconductor

Part number	2SC5057
Manufacturer	Hitachi Semiconductor
File Size	32.92 KB
Description	Silicon NPN Triple Diffused Planar Transistor
Datasheet	2SC5057 Datasheet
Additional preview pages of the 2SC5057 datasheet.

High breakdown voltage VCBO = 1700 V Outline TO-3PL 1 2 3 1. Base 2. Collector 3. Emitter 2SC5057 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(surge) PC.
1 Tj Tstg Ratings 1700 900 6 20 25 200 150.
55 to +150 Unit V V V A A W °C.

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Published: Jun 12, 2016 |