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2SB1386 PNP Transistor

2SB1386 Description

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1386 TRANSISTOR (PNP) SOT-89-3L .

2SB1386 Features

* z Low collector saturation voltage z Execllent current-to-gain characteristics 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. EMITTER Symbol Parameter VCBO Collector-Base Voltage Value -30 Unit V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage

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Datasheet Details

Part number
2SB1386
Manufacturer
JCET
File Size
354.01 KB
Datasheet
2SB1386-JCET.pdf
Description
PNP Transistor

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PNP Transistor JCET
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