Datasheet4U Logo Datasheet4U.com

2SB1386

PNP Transistor

2SB1386 Features

* z Low collector saturation voltage z Execllent current-to-gain characteristics 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. EMITTER Symbol Parameter VCBO Collector-Base Voltage Value -30 Unit V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage

2SB1386 Datasheet (354.01 KB)

Preview of 2SB1386 PDF

Datasheet Details

Part number:

2SB1386

Manufacturer:

JCET

File Size:

354.01 KB

Description:

Pnp transistor.

📁 Related Datasheet

2SB1381 - TRANSISTOR (Toshiba Semiconductor)
.

2SB1381 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB1381 DESCRIPTION ·With TO-220F package ·Compleme.

2SB1381 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor 2SB1381 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- .

2SB1382 - Silicon PNP Transistor (Sanken electric)
(2 k Ω) (80 Ω) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1382 –120 –120 –6 –16(Pulse–26) –1 75(Tc=25.

2SB1382 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 200.

2SB1382 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Darlington Power Transistors 2SB1382 DESCRIPTION ·With TO-3PML packag.

2SB1383 - Silicon PNP Transistor (Sanken electric)
(2 k Ω) (80 Ω) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1383 –120 –120 –6 –25(Pulse–40) –2 120(Tc=2.

2SB1383 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.)@ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown.

TAGS

2SB1386 PNP Transistor JCET

Image Gallery

2SB1386 Datasheet Preview Page 2

2SB1386 Distributor