* High density cell design for ultra low RDS(ON)
* Fully characterized avalanche voltage and
* Excellent package for good heat dissipation
* Special process technology for high ESD current
* Good stability and uniformity with high EAS APPLICATIONS capability
* High side
CJAB35N03
JCET
1.23 MB
N-channel mosfet.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
PDFN:%3.3×3.3-8L Plastic-Encapsulate MOSFETS
CJAB35N03
V(BR)DSS
30 V
N-Channel Power MOSFET
RDS.
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