* High density cell design for ultra low RDS(ON)
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS APPLICATIONS
* Battery and loading switching MARKING CJAB 35P03 XX CJAB35P03 = Part No. Solid dot=Pin1 indicator XX=Date Code
* E
CJAB35P03
JCET
1.48 MB
P-channel power mosfet.
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
PDFNWB3.3×3.3-8L Plastic-Encapsulate MOSFETS
CJAB35P03 P-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX.
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