* High density cell design for ultra low RDS(ON)
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS APPLICATIONS
* Excellent package for good heat dissipation
* Special process technology for high ESD capability
* High side sw
CJAC35N03
JCET
1.16 MB
N-channel mosfet.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PDFN:%5×6-8L Plastic-Encapsulate MOSFETS CJAC35N03 V(BR)DSS 30 V N-Channel Power MOSFET RDS(on).
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