* High density cell design for ultra low RDS(ON)
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS APPLICATIONS
* Excellent package for good heat dissipation
* Special process technology for high ESD capability
* Battery and
CJAC50P03
JCET
1.15 MB
P-channel mosfet.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PDFN:%5×6-8L Plastic-Encapsulate MOSFETS CJAC50P03 P-Channel Power MOSFET V(BR)DSS RDS(on)MAX .
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