CJL6601 P- & N-Channel MOSFET

JCET

Description

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL6601 P-channel and N-channel Complementary MOSFETS GENER.
The CJL6601 uses advanced trench technology to provide excellent RDS(on) and low gate charge.

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Datasheet Specifications

Part number: CJL6601
Manufacturer: JCET
File Size: 109.34 KB
Datasheet: CJL6601-JCET.pdf
Description: P- & N-Channel MOSFET

Applications

* SOT-23-6L Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage N-channel VDS 30 P-channel -30 V Gate-Source Voltage VGS ±12 ±12 V Continuous Drain Current(1) ID 3.4 -2.3 A Pulsed Drain Current (2) IDM 30 -30 A Power Dissipation

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