CJL6602 P-channel and N-channel Complementary MOSFETS

JCET

Description

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL6602 P-channel and N-channel Complementary MOSFETS P-cha.
The CJL6602 uses advanced trench technology to provide excellent RDS(on) and low gate charge.

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Datasheet Specifications

Part number: CJL6602
Manufacturer: JCET
File Size: 1.17 MB
Datasheet: CJL6602-JCET.pdf
Description: P-channel and N-channel Complementary MOSFETS

Applications

* MARKING Equivalent Circuit L6602 Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Drain-Source Voltage Symbol VDS N-channel 30 Value P-channel -30 Unit V Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current (2) VGS ±12 ID 3.4 IDM 30 ±12 -2.3 -30 V A A Power Di

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