* z High Breakdown Voltage 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To A
2SA821S
JIANGSU CHANGJIANG
127.51 KB
Pnp transistor.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SA821S TRANSISTOR (PNP) 1. EMITTER FEA.
📁 Related Datasheet
2SA821 PNP Plastic Encapsulated Transistor (Secos)
2SA821 PNP Transistor (JIANGSU CHANGJIANG)
2SA821S HIGH VOLTAGE AMPLIFIER TRANSISTOR (Rohm)
2SA821S PNP Transistor (WEJ)
2SA825 PNP Transistor (Rohm)
2SA826 PNP Transistor (Rohm)
2SA807 Silicon POwer Transistors (SavantIC)
2SA807 POWER TRANSISTOR (Inchange Semiconductor)
2SA808 Silicon POwer Transistors (SavantIC)
2SA808 PNP Transistor (INCHANGE)
