Description
The C JP10N60/CJPF10N60 is a high volt age and high current power MOSFET , design ed to ha ve c haracteristics, such as fast switching time, low gate charge, lo w on-st ate resist ance and have rugged avalanche characteristics.
Features
- z Low Crss z Fast Switching z 100% avalanche tested
2.Drain
TO-220-3L/TO-220F
1. GATE 2. DRAIN 3. SOURCE
1.Gate
3.Source
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID 10 PD 2 RθJA 62.5 TJ Tstg -50 150 ~+150 Value 600 V ±30 A W ℃/W ℃ Unit
C,Mar,2014
http://www. Datasheet4U. com
Electrical charact.
CJP10N60-JIANGSUCHANGJIANG.pdf