JT010N065CED
Key Features
- Low gate charge
- Trench FS Technology
- saturation voltage： VCE(sat), typ = 1.5V,IC= 10A and TC = 25°C
- Coefficient 零栅压下集电极漏电流 Zero Gate Voltage Collector Current ICES 正向栅极体漏电流 Gate-body leakage current, forward IGESF VCE=650V, VGE=0V
- 反向栅极体漏电流 Gate-body leakage current, reverse IGESR VCE=0V, VGE =-20V
- 通态特性 On-Characteristics 阈值电压 Gate Threshold Voltage VGE(th) VCE=VGE,IC=250uA 5 VGE=15V,IC=10A
- 饱和压降 Tc=25°C Collector-Emmiter saturation Voltage VCESAT VGE=15V,IC=10A, Tc=125°C
- VGE=15V,IC=10A
- Tc=175°C 动态特性 Dynamic Characteristics 输入电容 Input capacitance Cies
- 输出电容 Output capacitance Coes VCE=25V,VGE=0V
