MMBT2907W Datasheet (JR Electronics) - PNP Silicon Epitaxial Planar Medium Power Transistor

MMBT2907W, PNP Silicon Epitaxial Planar Medium Power Transistor

MMBT2907W / MMBT2907AW PNP Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage MMBT2907W MMBT2907AW Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj Tstg Value 60 40 60 5 600 200 150 - 55 to + 150 Unit V V V mA mW OC OC ShangHai JR Electronics.CO.,LTD.