MMBT4401W Datasheet - JR Electronics

MMBT4401W NPN Silicon General Purpose Transistor

NPN Silicon General Purpose Transistor MMBT4401W Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 0.1 mA at VCE = 1 V, IC = 1 mA at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 150 mA at VCE = 2 V, IC = 500 mA Collector Cutoff Current at VCB = 35 V Base Cutoff Current .

MMBT4401W-JRElectronics.pdf