* infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.
* The soldering temperature and time shall not exceed 260°C for more than 10 seconds.
* When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less.
MMBT4401LT1 Datasheet (301.27 KB)
MMBT4401LT1
Motorola
301.27 KB
Switching transistor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT4401LT1/D
Switching Transistor
NPN Silicon
COLLECTOR 3 1 BASE
MMBT4401LT1
Motorol.
📁 Related Datasheet
MMBT4401L Switching Transistor (ON Semiconductor)
MMBT4401 NPN Silicon Epitaxial Planar Transistor (GME)
MMBT4401 NPN Transistor (CITC)
MMBT4401 Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
MMBT4401 NPN Transistor (GOOD-ARK)
MMBT4401 SWITCHING TRANSISTOR (HOTTECH)
MMBT4401 NPN Amplifier (Micro Commercial Components)
MMBT4401 NPN General Purpose Amplifier (Fairchild)
MMBT4401 Silicon NPN Transistor (NTE)
MMBT4401 NPN GENERAL PURPOSE AMPLIFIER (UTC)
