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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
C945
FEATURES Power dissipation PCM: Collector current ICM: V (BR) CBO: 0.15 60 A V Collector-base voltage Operating and storage junction temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter voltage breakdown Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure VCE(sat) VBE(sat) VCE=6V, IC=0.1mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=10mA, f =30 MHz VCB=10V, IE=0, f=1MHZ VCE=6V, IC=0.1mA Rg=10kΩ, f=1kMHZ 4 200 3.0 10 40 0.3 1 V V MHz pF dB
TRANSISTOR (NPN) TO-92
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C945 Datasheet
