• Part: C945P
  • Description: NPN SILICON TRANSISTOR
  • Category: Transistor
  • Manufacturer: NEC
  • Size: 294.09 KB
Download C945P Datasheet PDF
NEC
C945P
DESCRIPTION The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching. FEATURES - High voltage LVCEO = 50 V MIN. - Excellent h FE linearity h FE1 = (0.1 m A)/h FE2 (1.0 m A) = 0.92 TYP. PACKAGE DRAWING (Unit: mm) φ 5.2 MAX. 5.5 MAX. 12.7 MIN. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature Junction Temperature Maximum Power Dissipation (TA = 25°C) - 55 to +150°C +150°C Maximum Total Power Dissipation Maximum Voltages and Currents (TA = 25°C) 250 m W VCBO Collector to Base Voltage 60 V VCEO VEBO IC Collector to Emitter Voltage Emitter to Base Voltage Collector Current 50 V 5.0 V 100 m A Base Current 20 m A 1.27 2.54 1.77 MAX. 4.2 MAX. 1. Emitter 2. Collector 3. Base EIAJ: JEDEC: IEC: SC43B TO92 PA33 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTIC DC Current Gain DC Current Gain Gain Bandwidth Product Collector to Base Capacitance Collector Cutoff Current Emitter Cutoff Current Base to Emitter Voltage...