• Part: C945
  • Description: NPN SILICON TRANSISTOR
  • Category: Transistor
  • Manufacturer: NEC
  • Size: 294.09 KB
Download C945 Datasheet PDF
NEC
C945
DESCRIPTION The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching. FEATURES - High voltage LVCEO = 50 V MIN. - Excellent h FE linearity h FE1 = (0.1 m A)/h FE2 (1.0 m A) = 0.92 TYP. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature Junction Temperature Maximum Power Dissipation (TA = 25°C) Total Power Dissipation - 55 to +150°C +150°C Maximum 250 m W Maximum Voltages and Currents (TA = 25°C) VCBO Collector to Base Voltage VCEO Collector to Emitter Voltage VEBO Emitter to Base Voltage IC Collector Current IB Base Current 60 V 50 V 5.0 V 100 m A 20 m A PACKAGE DRAWING (Unit: mm) φ 5.2 MAX. 5.5 MAX. 12.7 MIN. 0.5 1.27 1.77 MAX. 4.2 MAX. 1. Emitter 2. Collector 3. Base EIAJ: JEDEC: IEC: SC43B TO92 PA33 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTIC DC Current Gain DC Current Gain Gain Bandwidth Product Collector to Base Capacitance Collector Cutoff Current Emitter Cutoff Current Base to Emitter Voltage Collector...