3DD13001 - High Voltage Fast Switching NPN Power Transistor
(GME)
Production specification
High Voltage Fast Switching NPN Power Transistor 3DD13001
FEATURES
PC=350mW(Mounted on ceramic substrate). Pb
High sp.
3DD13001 - TRANSISTOR
(Jiangsu Changjiang Electronics)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13001
TRANSISTOR£¨NPN £©
TO¡ª 92
FEATURES Power dissip.
3DD13001 - Plastic-Encapsulated Transistors
(TRANSYS Electronics)
Transys
Electronics
L I M I T E D
TO-251 Plastic-Encapsulated Transistors
3DD13001
FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃)
1. BASE 2. COLLEC.
3DD13001 - NPN Transistor
(SeCoS)
3DD13001
Elektronische Bauelemente 0.2A , 600V NPN Plastic-Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f.
3DD13001 - NPN Transistors
(Kexin)
SMD Type
NPN Transistors 3DD13001
Transistors
■ Features
● Collector-emitter Voltage: V(BR)CEO=400V ● Collector Current: IC=0.2A
1.70 0.1
0.42 0..
3DD13001 - NPN Transistor
(WEJ)
.