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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13001
TRANSISTOR£¨NPN £©
TO¡ª 92
FEATURES Power dissipation PCM : 1.25 W£¨ Tamb=25¡æ£© Collector current www.DataSheet4U.com ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE£¨ 1£© DC current gain hFE£¨ 2£© Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat)
1.BASE
2.COLLECTOR
3.
3DD13001 Datasheet
