HBR10100
Jilin Sino
558.52kb
Schottky barrier diode. of Changes 2010-02-04 200911H 201002I Added TO-220HF. (Rev.):201002I 8/8
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HBR10100BF - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR10100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
100 V 175 ℃ 0.7V (@Tj=125℃)
z z
APPLICATIO.
HBR10100BFR - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR10100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
100 V 175 ℃ 0.7V (@Tj=125℃)
z z
APPLICATIO.
HBR10100CT - Schottky Barrier Rectifier
(Inchange Semiconductor)
Schottky Barrier Rectifier
FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overv.
HBR10100F - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR10100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
100 V 175 ℃ 0.7V (@Tj=125℃)
z z
APPLICATIO.
HBR10100FR - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR10100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
100 V 175 ℃ 0.7V (@Tj=125℃)
z z
APPLICATIO.
HBR10100HF - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR10100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
100 V 175 ℃ 0.7V (@Tj=125℃)
z z
APPLICATIO.
HBR10100HFR - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR10100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
100 V 175 ℃ 0.7V (@Tj=125℃)
z z
APPLICATIO.
HBR10100S - SCHOTTKY BARRIER DIODE
(JILIN SINO)
R SCHOTTKY BARRIER DIODE
HBR10100S
IF(AV) VRRM Tj VF(max)
MAIN
CHARACTERISTICS
10(2×5)A
100 V 175 ℃ 0.7V (@Tj=125℃)
l l
APPLICATIONS
l High.
HBR10100Z - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR10100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
100 V 175 ℃ 0.7V (@Tj=125℃)
z z
APPLICATIO.
HBR10100ZR - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR10100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
100 V 175 ℃ 0.7V (@Tj=125℃)
z z
APPLICATIO.
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