HBR10200 Datasheet, Rectifier, Inchange Semiconductor

HBR10200 Features

  • Rectifier
  • Common Cathode Structure
  • Low Power Loss/High Efficiency
  • High Operating Junction Temperature
  • Guarding for Overvoltage protection,High reliability

PDF File Details

Part number:

HBR10200

Manufacturer:

Inchange Semiconductor

File Size:

208.90kb

Download:

📄 Datasheet

Description:

Schottky barrier rectifier.

Datasheet Preview: HBR10200 📥 Download PDF (208.90kb)
Page 2 of HBR10200

HBR10200 Application

  • Applications
  • High Frequency switch power Supply
  • Free wheeling diodes and polarity protection applications ABSOLUTE MAXIMUM RATING

TAGS

HBR10200
Schottky
Barrier
Rectifier
Inchange Semiconductor

📁 Related Datasheet

HBR10200 - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10(2×5)A 200 V 175 ℃ 0.75V (@Tj=125℃) z z APPLICATI.

HBR10200C - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10(2×5)A 200 V 175 ℃ 0.75V (@Tj=125℃) z z APPLICATI.

HBR10200CR - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10(2×5)A 200 V 175 ℃ 0.75V (@Tj=125℃) z z APPLICATI.

HBR10200CT - Schottky Barrier Rectifier (Inchange Semiconductor)
Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overv.

HBR10200F - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10(2×5)A 200 V 175 ℃ 0.75V (@Tj=125℃) z z APPLICATI.

HBR10200FR - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10(2×5)A 200 V 175 ℃ 0.75V (@Tj=125℃) z z APPLICATI.

HBR10200HF - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10(2×5)A 200 V 175 ℃ 0.75V (@Tj=125℃) z z APPLICATI.

HBR10200HFR - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10(2×5)A 200 V 175 ℃ 0.75V (@Tj=125℃) z z APPLICATI.

HBR10100 - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR10100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10(2×5)A 100 V 175 ℃ 0.7V (@Tj=125℃) z z APPLICATIO.

HBR10100BF - SCHOTTKY BARRIER DIODE (Jilin Sino)
R SCHOTTKY BARRIER DIODE HBR10100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10(2×5)A 100 V 175 ℃ 0.7V (@Tj=125℃) z z APPLICATIO.

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