BC847S Datasheet - Jin Yu Semiconductor

BC847S NPN Transistor

Multi-chip transistor (NPN) APPLICATION This device is designed for general purpose amplifier applications Marking :1C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous 200 PD Power Dissipation 200 RθJA Thermal Resistance. Junction to Ambient 625 Tj Junction Temperature 150 Tstg Storage Temperature Range -55~+150 Units V mA mW .

BC847S Datasheet (627.68 KB)