Part number:
K3520PQ-XH
Manufacturer:
KEC
File Size:
72.12 KB
Description:
Common-drain dual n-channel enhancement mode field effect transistor
K3520PQ-XH Datasheet (72.12 KB)
K3520PQ-XH Datasheet (72.12 KB)
K3520PQ-XH
KEC
72.12 KB
Common-drain dual n-channel enhancement mode field effect transistor
* ¡⁄ Low on-state resistance RDS(ON)1 = 16m
* MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17m
* MAX (VGS=3.9V, IS=1.0A) RDS(ON)3 = 20m
* MAX (VGS=3.5V, IS=1.0A) G2 1080 S1 G1 BOTTOM : COMMON DRAIN _10 m 180 + MAXIMUM RATING (Ta=25¡ CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Storage T
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