K3520PQ-XH - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
K3520PQ-XH Features
* ¡⁄ Low on-state resistance RDS(ON)1 = 16m
* MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17m
* MAX (VGS=3.9V, IS=1.0A) RDS(ON)3 = 20m
* MAX (VGS=3.5V, IS=1.0A) G2 1080 S1 G1 BOTTOM : COMMON DRAIN _10 m 180 + MAXIMUM RATING (Ta=25¡ CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Storage T
