K3520PQ-XH Datasheet - KEC

datasheet Preview Page 1 from Datasheet4u.com

K3520PQ-XH Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

SEMICONDUCTOR TECHNICAL DATA General .
The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.

K3520PQ-XH_KEC.pdf

K3520PQ-XH Datasheet Preview — Preview of K3520PQ-XH PDF

Datasheet Details

Part number:

K3520PQ-XH

Manufacturer:

KEC

File Size:

72.12 KB

Description:

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Features

* ¡⁄ Low on-state resistance RDS(ON)1 = 16m
* MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17m
* MAX (VGS=3.9V, IS=1.0A) RDS(ON)3 = 20m
* MAX (VGS=3.5V, IS=1.0A) G2 1080 S1 G1 BOTTOM : COMMON DRAIN _10 m 180 + MAXIMUM RATING (Ta=25¡ CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Storage T

K3520PQ-XH Distributors

📁 Related Datasheet

K3520-01MR K3524-01 K3525-01MR K3528 K3529-01 K350

📌 All Tags

K3520PQ-XH Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor KEC

KEC K3520PQ-XH-like datasheet

K3519PQ-XH