K3520PQ-XH Datasheet - KEC

K3520PQ-XH Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

K3520PQ-XH Features

* ¡⁄ Low on-state resistance RDS(ON)1 = 16m

* MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17m

* MAX (VGS=3.9V, IS=1.0A) RDS(ON)3 = 20m

* MAX (VGS=3.5V, IS=1.0A) G2 1080 S1 G1 BOTTOM : COMMON DRAIN _10 m 180 + MAXIMUM RATING (Ta=25¡ CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Storage T

K3520PQ-XH_KEC.pdf

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Datasheet Details

Part number:

K3520PQ-XH

Manufacturer:

KEC

File Size:

72.12 KB

Description:

Common-drain dual n-channel enhancement mode field effect transistor.

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K3520PQ-XH K3520PQ-XH Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor KEC

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