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K3519PQ-XH - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

K3519PQ-XH Description

SEMICONDUCTOR TECHNICAL DATA General .
The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.

K3519PQ-XH Features

* ¡⁄ Low on-state resistance RDS(ON)1 = 16m
* MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17m
* MAX (VGS=3.9V, IS=1.0A) RDS(ON)3 = 20m
* MAX (VGS=3.5V, IS=1.0A) S1 S2 1080 G1 G2 BOTTOM : COMMON DRAIN _10 180 + MAXIMUM RATING (Ta=25¡ CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Stora

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Datasheet Details

Part number
K3519PQ-XH
Manufacturer
KEC
File Size
72.87 KB
Datasheet
K3519PQ-XH_KEC.pdf
Description
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor KEC
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