K3511 - MOS Field Effect Transistor

Product Overview

Kexin

Part number	K3511
Manufacturer	Kexin
File Size	39.79 KB
Description	MOS Field Effect Transistor
Datasheet	K3511 Datasheet
Additional preview pages of the K3511 datasheet.

Super low on-state resistance: RDS(on) = 12.5 m MAX. (VGS = 10 V, ID = 42 A) +0.2 8.7-0.2 Low Ciss: Ciss = 5900 pF TYP. Built-in gate protection diode +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature.
PW 10 s,Duty Cycle 1% Tch Tstg Sy.

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Published: Jul 28, 2014 |