Part number:
K3510
Manufacturer:
File Size:
149.62 KB
Description:
N-channel power mosfet.
* Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
* Low Ciss: Ciss = 8500 pF TYP.
* Built-in gate protection diode 2SK3510-S TO-262 2SK3510-ZJ 2SK3510-Z TO-263 TO-220SMDNote Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOL
K3510
149.62 KB
N-channel power mosfet.
📁 Related Datasheet
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MOS Field Effect Transistor 2SK3511
TO-263
+0.1 1.27-0.1
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Super low on-state resistan.
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DATA SHEET
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SWITCHING N-CHANNEL POWER MOS FET
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..
co Super FAP-G .Series U 4 t Features e High speed switching e h Low on-resistance Sbreadown No secondary a t power Low driving a.
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High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
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