K3510 Datasheet - Renesas

K3510 N-Channel Power MOSFET

K3510 Features

* Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A)

* Low Ciss: Ciss = 8500 pF TYP.

* Built-in gate protection diode 2SK3510-S TO-262 2SK3510-ZJ 2SK3510-Z TO-263 TO-220SMDNote Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOL

K3510-Renesas.pdf

K3510 Datasheet Preview — Preview of K3510 PDF

Datasheet Details

Part number:

K3510

Manufacturer:

Renesas ↗

File Size:

149.62 KB

Description:

N-channel power mosfet.

📁 Related Datasheet

K3511 MOS Field Effect Transistor (Kexin)

K3511 MOS FIELD EFFECT TRANSISTOR (Renesas)

K3515-01MR 2SK3515-01MR (Fuji Electric)

K3518 2SK3518 (Fuji Semiconductors)

K3519PQ-XH Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor (KEC)

K350 Silicon N-Channel MOSFET (Hitachi)

K3500G Clock Oscillator (MTRONPTI)

K3502-01MR 2SK3502-01MR (Fuji Electric)

TAGS

K3510 K3510 N-Channel Power MOSFET Renesas

K3510 Distributor