K3510
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N-channel power mosfet. The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NU
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K3511 - MOS Field Effect Transistor
(Kexin)
SMD Type
MOSFET
MOS Field Effect Transistor 2SK3511
TO-263
+0.1 1.27-0.1
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Super low on-state resistan.
K3511 - MOS FIELD EFFECT TRANSISTOR
(Renesas)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3511
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3511 is N-channel MOS Field Effect Transistor d.
K3515-01MR - 2SK3515-01MR
(Fuji Electric)
2SK3515-01MR
Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MO.
K3518 - 2SK3518
(Fuji Semiconductors)
..
co Super FAP-G .Series U 4 t Features e High speed switching e h Low on-resistance Sbreadown No secondary a t power Low driving a.
K3519PQ-XH - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
(KEC)
SEMICONDUCTOR
TECHNICAL DATA
General Description
The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitat.
K350 - Silicon N-Channel MOSFET
(Hitachi)
.
K3500G - Clock Oscillator
(MTRONPTI)
K3500G Series
8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator
THIS PRODUCT IS NOT RECOMMENDED FOR NEW DESIGNS. 3.3V Crystal Clock Oscillators PLEASE REF.
K3502-01MR - 2SK3502-01MR
(Fuji Electric)
2SK3502-01MR
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MO.
K3503FC450 - Medium Voltage Thyristor
(IXYS)
WESTCODE
An IXYS Company
Date:- 17 Nov, 2004 Data Sheet Issue:- 1a
Provisional Data
Medium Voltage Thyristor Types K3503F#450 to K3503.
K3503FC460 - Medium Voltage Thyristor
(IXYS)
WESTCODE
An IXYS Company
Date:- 17 Nov, 2004 Data Sheet Issue:- 1a
Provisional Data
Medium Voltage Thyristor Types K3503F#450 to K3503.
