KDV301E - Silicon Diode
KDV301E Features
* High Capacitance Ratio : C2V/C25V=14.5(Min.) Low Series Resistance : rs=1.1 (Max.) Small Package : ESC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL VR Tj Tstg RATING 32 150 -55 150 UNIT V KDV301E VARIABLE CAPACITANCE DIODE SILICO
