KDV350 - VARIABLE CAPACITANCE DIODE
KDV350 Features
* Low Series Resistance : rS=0.50 (Max.) Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 15 150 -55 150 UNIT V KDV350 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK E A K F
