Part number:
KF13N60N
Manufacturer:
KEC
File Size:
88.32 KB
Description:
N channel mos field effect transistor.
* VDSS(Min.)= 600V, ID= 13A Drain-Source ON Resistance : RDS(ON)=0.56(Max.) Qg(typ.) =36nC @VGS =10V d D E M P P T 1 2 3 MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Dio
KF13N60N
KEC
88.32 KB
N channel mos field effect transistor.
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