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KPS11N60F N-Channel MOSFET

KPS11N60F Description

SEMICONDUCTOR TECHNICAL DATA KPS11N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR General .
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche charac.

KPS11N60F Features

* VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 @VGS=10V Qg(typ. )= 23nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repeti

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Datasheet Details

Part number
KPS11N60F
Manufacturer
KEC
File Size
382.16 KB
Datasheet
KPS11N60F-KEC.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET KEC
KEC KPS11N60F-like datasheet