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KTC812T - EPITAXIAL PLANAR NPN TRANSISTOR

KTC812T Description

SEMICONDUCTOR TECHNICAL DATA FOR MUTING AND SWITCHING APPLICATION..

KTC812T Features

* High Emitter-Base Voltage : VEBO=25V(Min. ) High Reverse hFE : Reverse hFE=150(Typ. ) (VCE=-2V, IC=-4mA) Low on Resistance : RON=1 (Typ. ), (IB=5mA) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 50 Collector-Emitter Voltage VCEO 20 Emitter-Base Voltage VEBO

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Datasheet Details

Part number
KTC812T
Manufacturer
KEC
File Size
48.56 KB
Datasheet
KTC812T-KEC.pdf
Description
EPITAXIAL PLANAR NPN TRANSISTOR

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EPITAXIAL PLANAR NPN TRANSISTOR KEC
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