MMBTA517 - EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation VCBO VCEO VEBO IC PC 40 30 10 400 350 Junction Temperature Tj 150 Storage Temperature Tstg -55 150 : Package Mounted On 99.5% Alumina 10 8 0.6mm.
UNIT V V V mA mW MMBTA517 EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.
