HBT169M
KERSEMI
490.44kb
Thyristors. Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control ap
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📁 Related Datasheet
HBT169M - THYRISTORS
(Hi-Sincerity Mocroelectronics)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HM200105 Issued Date : 2001.10.01 Revised Date : 2001.11.20 Page No. : 1/4
HBT169M
THYRISTORS
Descr.
HBT169M - Silicon Controlled Rectifiers
(Kexin)
SMD Type
Silicon Controlled Rectifiers HBT169M
Thyristor
Features
Repetitive peak off-state voltages :400V Average on-state current :0.5A RMS on-st.
HBT136AE - TRIAC
(Hi-Sincerity Mocroelectronics)
.
HBT137F-600 - INSULATED TYPE TRIAC
(SHANTOU HUASHAN)
Shantou Huashan Electronic Devices Co.,Ltd.
HBT137F-600
INSULATED TYPE TRIAC (TO-220F PACKAGE)
█ Features
* Repetitive Peak Off-State Voltage: 600.
HBT138F-600 - INSULATED TYPE TRIAC
(SHANTOU HUASHAN)
Shantou Huashan Electronic Devices Co.,Ltd.
HT138F-600
INSULATED TYPE TRIAC (TO-220F PACKAGE)
█ Features
* Repetitive Peak Off-State Voltage: 600V.
HBT139DE - Three Quadrant Triac
(Hi-Sincerity Mocroelectronics)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200308 Issued Date : 2003.11.01 Revised Date : 2003.11.28 Page No. : 1/4
HBT139XE
Three Quadrant T.
HBT139F-600 - INSULATED TYPE TRIAC
(SHANTOU HUASHAN)
Shantou Huashan Electronic Devices Co.,Ltd.
HBT139F-600
INSULATED TYPE TRIAC (TO-220F PACKAGE)
█ Features
* Repetitive Peak Off-State Voltage: 600.
HBT151 - Silicon Controlled Rectifier
(SHANTOU HUASHAN)
Shantou Huashan Electronic Devices Co.,Ltd.
HBT151
Silicon Controlled Rectifier
Features
* Repetitive Peak Off-State Voltage : 600V * R.M.S On-State.
HBT151-1000R - 12A SCR SMD
(HAOHAI)
12A SCR SMD : 12A 【】
SGS, RoHS
■QUICK REFERENCE【】
Part Number
Industry Part № IT(RMS) (A) VDRM / VRRM (V)
IGT (µA / mA) Package
Packing.
HBT151-500R - 12A SCR SMD
(HAOHAI)
12A SCR SMD : 12A 【】
SGS, RoHS
■QUICK REFERENCE【】
Part Number
Industry Part № IT(RMS) (A) VDRM / VRRM (V)
IGT (µA / mA) Package
Packing.