HBT151 - Silicon Controlled Rectifier

SHANTOU HUASHAN

HBT151 Description

Shantou Huashan Electronic Devices Co.,Ltd.HBT151 Silicon Controlled Rectifier .
Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high therma.

HBT151 Features

* Repetitive Peak Off-State Voltage : 600V
* R. M. S On-State Current(IT(RMS)=12A)
* Average On-State Current (IT(AV)=7.5A)

HBT151 Applications

* requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. Absolute Maximum Ratings Ta=25 Tstg Storage Temperature

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HBT151 Datasheet Preview — Preview of HBT151 PDF

Datasheet Details

Part number: HBT151
Manufacturer: SHANTOU HUASHAN
File Size: 951.54 KB
Datasheet: HBT151-SHANTOUHUASHAN.pdf
Description: Silicon Controlled Rectifier

📁 Related Datasheet

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HBT151-800R - 12A SCR SMD (HAOHAI)
HBT151-900R - 12A SCR SMD (HAOHAI)
HBT151B-1000R - Plastic envelope SCRs (HAOHAI)
HBT151B-500R - Plastic envelope SCRs (HAOHAI)

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Silicon Controlled Rectifier SHANTOU HUASHAN

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