SNN0630Q Advanced N-Ch Trench MOSFET

KODENSHI KOREA

SNN0630Q Description

SNN0630Q Advanced N-Ch Trench MOSFET Portable Equipment Application .

SNN0630Q Features

* Low On-state resistance: 28m at VGS = 10V, ID = 2.9A
* Low gate charge: Qg= 4.5nC (Typ. )
* High performance trench technology for extremely low RDS(on)
* 100% avalanche tested
* Halogen free and RoHS compliant device Ordering Information Part Number Marking Package G D S

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Datasheet Details

Part number: SNN0630Q
Manufacturer: KODENSHI KOREA
File Size: 384.30 KB
Datasheet: SNN0630Q-KODENSHIKOREA.pdf
Description: Advanced N-Ch Trench MOSFET

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Advanced N-Ch Trench MOSFET KODENSHI KOREA

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