SNN4010D

N-Ch Trench MOSFET

KODENSHI KOREA

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SNN4010D

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KODENSHI KOREA

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Description:

N-ch trench mosfet.
SNN4010D N-Ch Trench MOSFET Power Switching Application Features * Drain-source breakdown voltage:.
BVDSS=100V * Low gate charge device * Low drain-source On resistance: RDS(on)=25mΩ (Typ.) * Advance.

✔ SNN4010D Features

Drain-source breakdown voltage: BVDSS=100V
Low gate charge device
Low drain-source On resistance: RDS(on)=25mΩ (Typ.)
Advanced trench process technology
High av

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SNN4010D N-Ch Trench MOSFET KODENSHI KOREA

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Datasheet Details

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Description:

✔ SNN4010D Features

SNN4010D Distributor