STC5551F Datasheet - KODENSHI KOREA

STC5551F NPN Silicon Transistor

STC5551F Features

* High collector breakdown voltage : VCBO = 180V, VCEO = 160V

* Low collector saturation voltage : VCE(sat)=0.5V(MAX.) SOT-89 Ordering Information Type No. STC5551F N51: DEVICE CODE, Marking N51

* YWW

* : hFE rank, YWW(Y Package Code SOT-89 : Year code, WW : Weekly

Datasheet Details

STC5551F

KODENSHI KOREA

338.44 KB

Npn silicon transistor.

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STC5551F NPN Silicon Transistor KODENSHI KOREA

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