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STC5551F

NPN Silicon Transistor

STC5551F Features

* High collector breakdown voltage : VCBO = 180V, VCEO = 160V

* Low collector saturation voltage : VCE(sat)=0.5V(MAX.) SOT-89 Ordering Information Type No. STC5551F N51: DEVICE CODE, Marking N51

* YWW

* : hFE rank, YWW(Y Package Code SOT-89 : Year code, WW : Weekly

STC5551F General Description



* General purpose amplifier

* High voltage application PIN Connection Features

* High collector breakdown voltage : VCBO = 180V, VCEO = 160V

* Low collector saturation voltage : VCE(sat)=0.5V(MAX.) SOT-89 Ordering Information Type No. STC5551F N51: DEVICE CODE, .

STC5551F Datasheet (338.44 KB)

Preview of STC5551F PDF

Datasheet Details

Part number:

STC5551F

Manufacturer:

KODENSHI KOREA

File Size:

338.44 KB

Description:

Npn silicon transistor.

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TAGS

STC5551F NPN Silicon Transistor KODENSHI KOREA

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