* 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage tempera
2SC1622A
Kexin
54.09 KB
Npn silicon transistor.
SMD Type
NPN Silicon Epitaxial Transistor 2SC1622A
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
+0.1 2.4-0.1
High DC current gain.
+0.1 .
📁 Related Datasheet
2SC1622 - NPN Transistor
(NEC)
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2SC1622A - NPN Transistor
(NEC)
.
2SC1621 - PNP Transistor
(NEC)
.
2SC1621 - NPN Silicon Transistor
(Kexin)
SMD Type
NPN Silicon Epitaxial Transistor 2SC1621
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
Features
High speed : tstg.
2SC1623 - NPN Transistor
(NEC)
DATA SHEET
SILICON TRANSISTOR
2SC1623
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES • High DC Curre.
2SC1623 - Silicon Transistor
(GME)
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA).
High Voltage:VCEO=50.
2SC1623 - AMPLIFIER NPN TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SC1623
NPN SILICON TRANSISTOR
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD
DESCRIPT.
2SC1623 - NPN Transistor
(INCHANGE)
isc Silicon NPN Transistor
INCHANGE Semiconductor
2SC1623
DESCRIPTION ·SOT-23 plastic-encapsulate transistors ·High DC current gain:hFE=200(TYP)
@VC.
