2SC3392 - NPN Epitaxial Planar Silicon Transistors

Kexin

Datasheet Details

Part number	2SC3392
Manufacturer	Kexin
File Size	56.05 KB
Description	NPN Epitaxial Planar Silicon Transistors
Datasheet	2SC3392_Kexin.pdf

+0.1 2.4-0.1 Adoption of FBET process. High breakdown voltage : VCEO=50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature.

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Published: Oct 29, 2013 |