* 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rat
2SC3360
Kexin
54.86 KB
Npn silicon epitaxial transistor.
SMD Type
NPN Silicon Epitaxial Transistor 2SC3360
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
High DC current gain.hFE=90 to 450
+0.1 2.4.
📁 Related Datasheet
2SC3360 - NPN Silicon Transistor
(NEC)
.
2SC3360 - NPN SILICON TRANSISTOR
(Renesas)
DATA SHEET
SILICON TRANSISTOR
2SC3360
HIGH VOLTAGE AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
2SC3361 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number:EN3217
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1331/2SC3361
High-Speed Switching Applications
Features
· Fast switching spee.
2SC3361 - NPN Epitaxial Planar Silicon Transistors
(Kexin)
SMD Type
Transistors IC
NPN Epitaxial Planar Silicon Transistors 2SC3361
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
Features
+0.1 2.4-0.1
Fast swi.
2SC3365 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SC3365
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-3P
1. Base 2. Collector (Flange) 3. Em.
2SC3365 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot .
2SC3365 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
2SC3365
·
DESCRIPTION With TO-3PN package ·High vol.
2SC3365 - Silicon NPN Transistor
(Renesas)
2SC3365
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-3P
ADE-208-892 (Z) 1st. Edition
Septemb.
