2SC3444 Datasheet, Transistor, Kexin

2SC3444 Features

  • Transistor High voltage VCEO=60V. High collector current (Ic=1A). High collector dissipation Pc=500mW. Low VCE(sat): VCE(sat)=0.11V typ(@Ic=500mA,IB=25mA). Small package for mounting. Absolute Ma

PDF File Details

Part number:

2SC3444

Manufacturer:

Kexin

File Size:

69.56kb

Download:

📄 Datasheet

Description:

Small signal transistor.

Datasheet Preview: 2SC3444 📥 Download PDF (69.56kb)

TAGS

2SC3444
Small
Signal
Transistor
Kexin

📁 Related Datasheet

2SC3440 - Silicon NPN Epitaxial Type Transistor (ETC)
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION .

2SC3440-HF - NPN Transistors (Kexin)
SMD Type Transistors NPN Transistors 2SC3440-HF ■ Features ● Low collector to emitter saturation voltage. ● Excellent linearity nof DC forward curre.

2SC3441 - SILICON NPN EPTAXIAL TRANSISTOR (ETC)
http://.idc-.co.jp 854-0065 6-41 2002 11 .

2SC3443 - Silicon NPN Epitaxial Type Transistor (ETC)
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION .

2SC3443 - Small Signal Transistor (Kexin)
SMD Type Small Signal Transistor 2SC3443 Transistors Features High hFE=150 to 800. High collector current (Ic=2A). High collector dissipation Pc=500.

2SC3444 - Silicon NPN Epitaxial Type Transistor (ETC)
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION .

2SC3446 - NPN Transistor (Sanyo Semicon Device)
Ordering number:EN1544B NPN Triple Diffused Planar Silicon Transistor 2SC3446 500V/3A Switching Regulator Applications Features · High breakdown vol.

2SC3446 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor 2SC3446 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Ar.

2SC3447 - NPN Transistor (Sanyo Semicon Device)
Ordering number:EN1545B NPN Triple Diffused Planar Silicon Transistor 2SC3447 500V/5A Switching Regulator Applications Features · High breakdown vol.

2SC3447 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor 2SC3447 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Ar.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts