* High-speed switching +0.2 9.70 -0.2 High collector-base voltage (Emitter open) VCBO Satisfactory linearity of forward current transfer ratio hFE +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3
2SC3496A
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Npn silicon triple diffused transistor.
SMD Type Transistors NPN Silicon Triple Diffused Transistor 2SC3496A TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +.
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