2SC3495 Datasheet - Sanyo Semicon Device

2SC3495 NPN Epitaxial Planar Silicon Transistor

2SC3495 Features

* Adoption of FBET process.

* High DC current gain (hFE=500 to 2000).

* High breakdown voltage (VCEO≥100V).

* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).

* High VEBO (VEBO≥15V).

* Small Cob (Cob=1.8pF typ). Package Dimensions unit:mm 2003A [2SC3495] JEDEC :

Datasheet Details

2SC3495

Sanyo Semicon Device

89.67 KB

Npn epitaxial planar silicon transistor.

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