* High breakdown voltage : VCEO≤200V.
* Small reverse transfer capacitance and excellent high frequency characteristics : Cre=1.2pF (NPN), 1.7pF (PNP).
* Adoption of FBET process. 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 15.5 0.5 ( ) : 2SA1352 2.4 4.8 Specifications Absolute Maximum
2SC3416
Sanyo Semicon Device
78.90 KB
Pnp/npn epitaxial planar silicon transistors.
www.DataSheet4U.com Ordering number:ENN1411C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1352/2SC3416
Ultrahigh-Definition CRT Display Video Out.
📁 Related Datasheet
2SC3412 - Power Transistor
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V (Min) ·High Power Dissipation ·Minimum Lot-to-Lot.
2SC3413 - Silicon NPN Epitaxial Transistor
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2SC3413
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• Low frequency low noise amplifier • HF amplifier
Outline
SPAK
1
23
1. Emitter 2. Collector 3. Base
2.
2SC3415 - NPN Plastic-Encapsulated Transistor
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Elektronische Bauelemente
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RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f.
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2SC3416 - NPN Transistor
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isc Silicon NPN Power Transistor
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2SC3417 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number:ENN1390D
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1353/2SC3417
Ultrahigh-Definition CRT Display Video Output Applications
App.
2SC3417 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
2SC3417
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.
/ Features
,。 High breakd.
