2SC3412 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V (Min). High Power Dissipation. Minimum Lot-to-Lot variations for robust device perf.

📥 Download Datasheet

2SC3412 Datasheet Preview — Preview of 2SC3412 PDF

Datasheet Specifications

Part number: 2SC3412
Manufacturer: Inchange Semiconductor
File Size: 208.33 KB
Datasheet: 2SC3412_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1300 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Cu

2SC3412 Distributors

📁 Related Datasheet

2SC3413 2SC3415 2SC3415S 2SC3416 2SC3417 2SC3419

📌 All Tags

2SC3412 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SC3412-like datasheet