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2SC3412 - Power Transistor

2SC3412 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V (Min). High Power Dissipation. Minimum Lot-to-Lot variations for robust device perf.

2SC3412 Applications

* Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1300 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Cu

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