2SC3421 Datasheet - Inchange Semiconductor

2SC3421, Silicon NPN Power Transistor

isc Silicon NPN Power Transistor 2SC3421 .
High Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min). Complement to Type 2SA1358. Minimum Lot-to-Lot variations for robust devi.

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Datasheet Details

Part number:

2SC3421

Manufacturer:

Inchange Semiconductor

File Size:

217.27 KB

Description:

Silicon NPN Power Transistor

Applications

* Designed for audio frequency power amplifier applications.
* Suitable for driver of 60 to 80 Watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5

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2SC3421 Silicon NPN Power Transistor Inchange Semiconductor

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