2SC3421 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SC3421 .
High Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min). Complement to Type 2SA1358. Minimum Lot-to-Lot variations for robust devi.

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Datasheet Specifications

Part number: 2SC3421
Manufacturer: Inchange Semiconductor
File Size: 217.27 KB
Datasheet: 2SC3421_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for audio frequency power amplifier applications.
* Suitable for driver of 60 to 80 Watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5

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2SC3421 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SC3421-like datasheet