2SC3420
Toshiba ↗ Semiconductor
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Silicon npn transistor.
2SC3420
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3420
Strobe Flash Applications Audio Power Amplifier Applications
Unit: mm
📁 Related Datasheet
2SC3420 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current-IC= 5.0A ·DC Current Gain-
: hFE= 70(Min)@IC= 4A ·Low Saturation Voltage
: VCE(s.
2SC3420 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
2SC3420
DESCRIPTION ·With TO-126 package ·High DC c.
2SC3420 - NPN Transistor
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126C Plastic-Encapsulate Transistors
2SC3420 TRANSISTOR (NPN)
TO – 126C
FEATURES
z High DC Cu.
2SC3420 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
2SC3420
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.
/ Features
,, 。 High DC .
2SC3420 - NPN Transistor
(GME)
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
FEATURES
z High DC Current Gain: hFE=140~600(VCE=2V,IC=0.5A)
Pb
Lead-free
hFE=70(Min.) (VCE=2V,IC.
2SC3421 - Silicon NPN Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3421
Audio Frequency Power Amplifier Applications
2SC3421
Unit: mm
• Complementary to.
2SC3421 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
2SC3421
DESCRIPTION ·High Collector-Emitter Breakdown Voltage
: V(BR)CEO= 120V(Min) ·Complement to Type 2SA1358 ·Mi.
2SC3421 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
2SC3421
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.
/ Features
VCEO， 60-80W .
