2SC3420 Datasheet - Toshiba Semiconductor

2SC3420 Silicon NPN Transistor

2SC3420 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3420 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) High collector power dissipation: PC = 10 W (Tc = 25°C), PC = 1.5 W (Ta = 25°C) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-bas.

2SC3420 Datasheet (180.61 KB)