2SC3405 Datasheet, Transistor, Toshiba Semiconductor

2SC3405 Features

• Transistor t laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS comp

PDF File Details

Part number:

2SC3405

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

181.95kb

Download:

📄 Datasheet

Description:

Silicon npn triple diffused type transistor.

2SC3405 Application

• Applications High Speed DC-DC Converter Applications Industrial Applications Unit: mm
• Excellent switching times: tr = 1.0 μs (max) tf =

TAGS

2SC3405

Toshiba Semiconductor

📁 Related Datasheet

2SC3400 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo)
Ordering number : EN 1288C 2SA1346/2SC3400 PNP/NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) .

2SC3401 - PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS (Sanyo)
Free Datasheet http://../ Free Datasheet http://../ .

2SC3402 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
.

2SC3402 - NPN Transistor (ETC)
3DG3402(2SC3402) NPN PCM ICM Tjm Tstg V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO VCEsat hFE fT TA=25℃ ICB=10μA ICE=100μA IEB=10μA VCB.

2SC3403 - Silicon PNP Triple-Diffused Planar Type Transistor (ETC)
Free Datasheet http://../ .

2SC3404 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
.

2SC3405 - NPN Silicon Triple Diffused Transistor (Kexin)
SMD Type Transistors NPN Silicon Triple Diffused Transistor 2SC3405 TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Excellent.

2SC3409 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon NPN Power Transistors 2SC3409 DESCRIPTION ·With TO-3PN package ·High brea.

2SC3409 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3409 DESCRIPTION ·Low Collector Saturation Voltage ·100% avalanche tested ·Good Linearity.

2SC3412 - Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V (Min) ·High Power Dissipation ·Minimum Lot-to-Lot.